dzt658 npn surface mount transistor features ? epitaxial planar die construction ? ideally suited for automated assembly processes ? ideal for medium pow e r switching or amplification applications ? lead free by design/rohs compliant (note 1) ? "green" dev i ce (note 2) mechanical data ? case: sot-223 ? case material: molded plastic, "green" molding compound. ul f l ammability classification rating 94v-0 ? moisture sensitivity : level 1 per j-std-020c ? terminals: finish ? matte tin annealed over copper leadframe (lead free plating). solderable per mil-std-202, method 208 ? marking information: see page 3 ? ordering information: see page 3 ? weight: 0.115 grams 2 3 4 1 sot-223 new product 2,4 3 1 collector emitte r base 4 3 2 1 c c b e top view schematic and pin configuration maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo 400 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 5 v continuous collector current i c 0.5 a peak pulse current i cm 1 a thermal characteristics characteristic symbol value unit power dissipation @t a = 25c (note 3) p d 1 w thermal resistance, junction to ambient air (note 3) @t a = 25c r ja 125 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics collector-base breakdown voltage v (br)cbo 400 ? ? v i c = 100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo 400 ? ? v i c = 10ma, i b = 0 emitter-base breakdown voltage v (br)ebo 5 ? ? v i e = 100 a, i c = 0 collector cutoff current i cbo ? ? 100 na v cb = 320v, i e = 0 emitter cutoff current i ebo ? ? 100 na v eb = 4v, i c = 0 on characteristics (note 4) collector-emitter saturation voltage v ce(sat) ? ? ? 0.075 0.06 0.08 0.3 0.25 0.5 v v v i c = 20ma, i b = 1ma i c = 50ma, i b = 5ma i c = 100ma, i b = 10ma base-emitter saturation voltage v be(sat) ? ? 0.9 v i c = 100ma, i b = 10ma base-emitter turn-on voltage v be(on) ? ? 1 v v ce = 5v, i c = 100ma dc current gain h fe 50 50 40 110 100 85 ? ? ? ? v ce = 5v, i c = 1ma v ce = 5v, i c = 100ma v ce = 10v, i c = 200ma ac characteristics transition frequency f t 50 ? ? mhz v ce = 20v, i c = 30ma, f = 30mhz output capacitance c obo ? ? 10 pf v cb = 20v, f = 1mhz switching times t on t off ? ? 138 175 ? ? ns ns v cc = 100v, i c = 100ma i b1 = 10ma, i b2 = -20ma notes: 1. no purposefully added lead. 2. diodes inc.'s "green" po licy can be found on our w ebsite at http://www.di odes.com/products/l ead_free/index.php . ds31308 rev. 2 - 2 1 of 3 www.diodes.com dzt658 ? diodes incorporated 3. device mounted on fr-4 pcb, pad layout as shown on page 3 or in diodes in c. suggested pad layout document ap02001, which can be found on our website at http:// www.di odes.com/datas heets/ap02001.pdf. 4. pulse test: pulse width 300 s. duty cycle 2.0%.
0 0.2 0.4 25 50 75 100 125 150 p , p o we r dissi p a t i o n (mw) d t , ambient temperature (c) fig. 1 max power dissipation vs. ambient temperature a 0.6 0.8 1.0 0 v , collector-emitter voltage (v) ce i, c o lle c t o r c u r r e n t (a) c fig. 2 typical collector current vs. collector-emitter voltage 0 0.05 0.10 0.15 0.20 0.25 012 3 4 5 i = 1ma b i = 2ma b i = 3ma b i = 4ma b i = 5ma b 0 50 100 150 200 250 0.001 0.01 0.1 1 i , collector current (a) c v , collector-emitter saturation voltage (v) ce(sat) fig. 4 typical collector-emitter saturation voltage vs. collector current 0.01 0.1 1.0 10 0.001 0.01 0.1 1 i , collector current (a) c v , base-emitter turn-on voltage (v) be(on) fig. 5 typical base-emitter turn-on voltage vs. collector current 0 0.2 0.4 0.6 0.8 1.0 0.001 0.01 0.1 1 i , collector current (a) c v , base-emitter saturation voltage (v) be(sat) fig. 6 typical base-emitter saturation voltage vs. collector current 0 0.2 0.4 0.6 0.8 1.0 0.001 0.01 0.1 1 new product ds31308 rev. 2 - 2 2 of 3 www. d iodes.com dzt658 ? diodes incorporated
ordering information (note 5) device packaging shipping DZT658-13 sot-223 2500/tape & reel notes: 5. for packaging details, go to our website at http://www.di odes.com/ap2007.pdf. marking information new product kn4 yww (top view) kn4 = product type marking code yww = date code marking y = last digit of year ex: 7 = 2007 ww = week code 01 - 52 package outline dimensions sot-223 dim min max typ a 1.55 1.65 1.60 a1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70 c 0.20 0.30 0.25 d 6.45 6.55 6.50 e 3.45 3.55 3.50 e1 6.90 7.10 7.00 e ? ? 4.60 e1 ? ? 2.30 l 0.85 1.05 0.95 q 0.84 0.94 0.89 all dimensions in mm suggested pad layout: important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the ri ghts of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products are represented on our website, harmless against all damages. life support diodes incorporated products are not authoriz ed for use as critical components in life support devices or systems without the e xpressed written approval of the president of diodes incorporated. ds31308 rev. 2 - 2 3 of 3 www.diodes.com dzt658 ? diodes incorporated
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